Alibaba.com offers 3,688 mosfet 1000v products. A wide variety of mosfet 1000v options are available to you, such as brand name, type.
* Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
Добавить в корзину 1шт. на сумму 1 260 руб.
- IXFT15N100Q3, N-channel Power MOSFET, IXYS HiperFET™ Q3 Series The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate.
- POWER MOSFET 1000V N-CHANNEL THRU-HOLE TO-254AA. POWER MOSFET THRU-HOLE 1000V N-CHANNEL. 250V N-Channel MOSFET.
Артикул:IXFT15N100Q3
Описание
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Технические параметры
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 16.05mm |
| Transistor Configuration | Одиночный |
| Brand | IXYS |
| Maximum Continuous Drain Current | 15 А |
| Package Type | TO-268 |
| Maximum Power Dissipation | 690 W |
| Series | HiperFET, Q3-Class |
| Mounting Type | Поверхностный монтаж |
| Minimum Operating Temperature | -55 °C |
| Width | 14мм |
| Maximum Gate Threshold Voltage | 6.5V |
| Height | 5.1мм |
| Maximum Drain Source Resistance | 1.05 Ω |
| Maximum Drain Source Voltage | 1000 V |
| Pin Count | 3 |
| Typical Gate Charge @ Vgs | 64 nC @ 10 V |
| Transistor Material | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Gate Source Voltage | -30 V, +30 V |
| California Prop 65 | Warning Information |
| Current - Continuous Drain (Id) @ 25В°C | 15A (Tc) |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 3250pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-268-3, DВіPak (2 Leads + Tab), TO-268AA |
| Power Dissipation (Max) | 690W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 7.5A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | HiPerFETв„ў -> |
| Supplier Device Package | TO-268 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
Дополнительная информация
1000v Mosfet N Channel
Datasheet IXFT15N100Q3
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
Mosfet 1000v 10a
Цена и наличие в магазинах